AB1A3M
器件描述：on-chip resistor NPN silicon epitaxial transistor
器件厂商：NEC [NEC]
文件大小：85.06KB，共6页
Sponsor by e络盟器件资料摘要：
1998©
Document No. D10836EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
• Current drive available up to 0.7 A
On-chip bias resistor
Low power consumption during drive
AB1 SERIES LISTS
Products R1 (KΩ)R2 (KΩ)
AB1A4A − 10
AB1L2Q 0.47 4.7
AB1A3M 1.0 1.0
AB1F3P 2.2 10
AB1J3P 3.3 10
AB1L3N 4.7 10
AB1A4M 10 10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 25 V
Emitter to base voltage VEBO 10 V
Collector current (DC) IC(DC) 0.7 A
Collector current (Pulse) IC(pulse) * 1.0 A
Base current (DC) IB(DC) 0.02 A
Total power dissipation PT 750 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50 %
Document No. D10836EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
• Current drive available up to 0.7 A
On-chip bias resistor
Low power consumption during drive
AB1 SERIES LISTS
Products R1 (KΩ)R2 (KΩ)
AB1A4A − 10
AB1L2Q 0.47 4.7
AB1A3M 1.0 1.0
AB1F3P 2.2 10
AB1J3P 3.3 10
AB1L3N 4.7 10
AB1A4M 10 10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 25 V
Emitter to base voltage VEBO 10 V
Collector current (DC) IC(DC) 0.7 A
Collector current (Pulse) IC(pulse) * 1.0 A
Base current (DC) IB(DC) 0.02 A
Total power dissipation PT 750 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50 %