©

1987
SILICON SWITCHING DIODE
1SS305
HIGH SPEED SWITCHING
SILICON EPITAXIAL DIODE
DATA SHEET
Document No. D16310EJ2V0DS00 (2nd edition)
(Previous No. DC-2102)
Date Published July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
• Low capacitance: Ct = 4.0 pF MAX.
• High speed switching: trr = 3.0 ns MAX.
• Wide applications including switching, limitter, clipper.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage VRM 100 V
DC Reverse Voltage VR 100 V
Peak Forward Current IFM 300 mA
Average Rectified Current IO 100 mA
DC Forward Current IF 100 mA
Maximum Temperatures
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Thermal Resistance
Junction to Ambient Rth(j-a) 0.85 °C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
VF1 IF = 10 mA 720 850 mV
VF2 IF = 50 mA 850 1000 mV
Forward Voltage
VF3 IF = 100 mA 950 1200 mV
Reverse Current IR VR = 100 V 1.0 µA
Capacitance Ct VR = 0 V, f = 1.0 MHz 2.0 4.0 pF
Reverse Recovery Time trr IF = 10 mA, VR = 6 V, RL = 100 Ω,
See Test Circuit.
3.0 ns
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
2.0
±
0.2
0.9
±
0.1
3
Marking
2
1
0.3
+
0.1
−
0
0.15
+
0.1
−
0.05
0.3
0.65
0 to 0.1
0.3
0.65
+
0.1
−
0
CONNECTION DIAGRAM (Top View)
2
1
3
1. N.C.
2. Anode
3. Cathode
Marking : A14