©

1987
SILICON SWITCHING DIODE
1SS303
HIGH SPEED SWITCHING
SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE
DATA SHEET
Document No. D16308EJ2V0DS00 (2nd edition)
(Previous No. DC-2100)
Date Published July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
• Low capacitance: Ct = 2.5 pF TYP.
• High speed switching: trr = 4.0 ns MAX.
• Wide applications including switching, limitter, clipper.
• Double diode configuration assures economical use.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage VRM 75 V
DC Reverse Voltage VR 50 V
Surge Current (1 µs)
Note
IFSM 6.0 A
Surge Current (1 µs) IFSM 4.0 A
Peak Forward Current
Note
IFM 450 mA
Peak Forward Current IFM 300 mA
Average Rectified Current
Note
IO 150 mA
Average Rectified Current IO 100 mA
Maximum Temperatures
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Thermal Resistance
Junction to Ambient
Note
Rth(j-a) 1.0 °C/mW
Junction to Ambient Rth(j-a) 0.85 °C/mW
Note Both diodes loaded simultaneously.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
VF1 IF = 10 mA 0.72 1.0 V
VF2 IF = 50 mA 0.88 1.1 V
Forward Voltage
VF3 IF = 100 mA 1.0 1.2 V
Reverse Current IR VR = 50 V 0.1 µA
Capacitance Ct VR = 0 V, f = 1.0 MHz 2.5 4.0 pF
Reverse Recovery Time trr See Test Circuit. 4.0 ns
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
2.0
±
0.2
0.9
±
0.1
3
Marking
2
1
0.3
+
0.1
−
0
0.15
+
0.1
−
0.05
0.3
0.65
0 to 0.1
0.3
0.65
+
0.1
−
0
CONNECTION DIAGRAM (Top View)
2
1
3
1. Cathode
2. Cathode
3. Anode
Marking : A4