BUL312FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
a73 HIGH VOLTAGE CAPABILITY
a73 LOW SPREAD OF DYNAMIC PARAMETERS
a73 MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
a73 VERY HIGH SWITCHING SPEED
a73 FULLY CHARACTERIZED AT 125
o
C
a73 LARGE RBSOA
a73 FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
a73 HORIZONTAL DEFLECTION FOR TV
a73 SMPS
a73 ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The BUL312FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
®
INTERNAL SCHEMATIC DIAGRAM
March 2004
TO-220FP
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1150 V
VCEO Collector-Emitter Voltage (IB = 0) 500 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
I
C
Collector Current 5 A
I
CM
Collector Peak Current (t
p
<5 ms) 10 A
I
B
Base Current 3 A
IBM Base Peak Current (tp <5 ms) 4 A
Ptot Total Dissipation at Tc = 25
o
C36W
V
isol
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
1500 V
T
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
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