Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Dynamic dv/dt Rating BV
DSS
600/650/700V
▼ Repetitive Avalanche Rated R
DS(ON)
3.6Ω
▼ Fast Switching I
D
3.3A
▼ Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data & specifications subject to change without notice
Rating
600/650/700- /A/H
AP03N70P
3.3
2.1
Storage Temperature Range -55 to 150
13.2
45
Linear Derating Factor 0.36
Parameter
3.3
Parameter
-55 to 150
85
200303032
3.3
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.TO-220 type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-
AC converters and high current high speed switching circuits.
± 30
G
D
S
TO-220
G
D
S