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MOS FIELD EFFECT TRANSISTOR
2SK1580
SWITCHING
N-CHANNEL MOS FET
DATA SHEET
Document No. D13555EJ5V0DS00 (5th edition)
Date Published June 2005 NS CP(K)
Printed in Japan
1991
The mark shows major revised points.

DESCRIPTION
The 2SK1580 is an N -channel vertical type MOS FET which
can be driven by 2.5 V power supply.
As the 2SK1580 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliance
including VCR cameras and headphone stereos which need
power saving.

FEATURES
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its high
input impedance.
• Possible to reduce the number of parts by omitting the bias
resistor.

ORDERING INFORMATION
PART NUMBER PACKAGE
2SK1580 SC-70 (SSP)
Marking: G13

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 16 V
Gate to Source Voltage (VDS = 0 V) VGSS ±16 V
Drain Current (DC) (TC = 25°C) ID(DC) ±100 mA
Drain Current (pulse)
Note
ID(pulse) ±200 mA
Total Power Dissipation (TA = 25°C) PT 150 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit: mm)

2.1±0.1
1.25±0.1
2.0
±
0.2
0.9
±
0.1
3
Marking
2
1
0.3
+
0.1
−
0
0.15
+
0.1
−
0.05
0.3
0.65
0 to 0.1
0.3
0.65
+
0.1
−
0
1. Source
2. Gate
3. Drain

EQUIVALENT CIRCUIT

Source
Body
Diode
Gate
Protection
Diode
Gate
Drain