MAXIMUM RATINGS (T
A
=25°C)
SYMBOL BC858 BC857 BC856 UNITS
Collector-Base Voltage V
CBO
30 50 80 V
Collector-Emitter Voltage V
CEO
30 45 65 V
Emitter-Base Voltage V
EBO
5.0
V
Collector Current I
C
100
mA
Peak Collector Current I
CM
200 mA
Peak Base Current I
BM
200 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature T
J
,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
V
CB
= 30V 15 nA
I
CBO
V
CB
= 30V, T
A
=150°C 4.0 µA
I
EBO
V
EB
=5.0V 100 nA
BV
CBO
I
C
=10µA (BC858) 30 V
BV
CBO
I
C
=10µA (BC857) 50 V
BV
CBO
I
C
=10µA (BC856) 80 V
BV
CEO
I
C
=10mA (BC858) 30 V
BV
CEO
I
C
=10mA (BC857) 45 V
BV
CEO
I
C
=10mA (BC856) 65 V
BV
EBO
I
E
=10µA 5.0 V
V
CE(SAT)
I
C
=10mA, I
B
=0.5mA 0.3 V
V
CE(SAT)
I
C
=100mA, I
B
=5.0mA 0.65 V
V
BE(ON)
I
C
=2.0mA, V
CE
=5.0V 0.6 0.75 V
V
BE(ON)
I
C
=10mA, V
CE
=5.0V 0.82 V
f
T
V
CE
=5.0V, I
C
=10mA, f=100MHz 100 MHz
NF V
CE
=5.0V, I
C
=200µA,
R
S
=2KΩ, f= 1KHz, BW=200Hz 10 dB
BC856A BC856B
BC857A BC857B BC857C
BC858A BC858B BC858C
MIN MAX MIN MAX MIN MAX
h
FE
V
CE
=5.0V, I
C
=2.0mA 125 250 220 475 420 800
BC856 SERIES
BC857 SERIES
BC858 SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 (10-September 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856,
BC857 and BC858 Series types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for general purpose switching
and amplifier applications.
MARKING CODE: PLEASE SEE MARKING
CODE TABLE ON FOLLOWING PAGE
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.