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1998©
Document No. D16140EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD2217
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2217 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This
transistor is ideal for direct driving from the IC out to drivers such as
pulse motor drivers and relay drivers in OA and FA equipment.
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 300 V
Collector to emitter voltage VCEO 300 V
Emitter to base voltage VEBO 7V
Collector current IC(DC) 300 mA
Collector current IC(pulse)* 600 mA
Base current IB(DC) 30 mA
Total power dissipation PT (Tc = 25°C) 25 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base (B)
2. Collector (C)
3. Emitter (E)