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1998©
Document No. D16131EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
FEATURES
• High-DC current gain due to Darlington connection
Low collector saturation voltage
Low collector cutoff current
Ideal for use in direct drive from IC output for magnet drivers such
as treminal equipment or cash registers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −100 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −7.0 V
Collector current IC(DC)
–
+5.0 A
Collector current IC(pulse)*
–
+8.0 A
Base current IB(DC) −0.5 A
Total power dissipation PT (Ta = 25°C) 1.5 W
Total power dissipation PT (Tc = 25°C) 30 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
g40g47g40g38g55g53g50g39g40
g38g50g49g49g40g38g55g44g50g49