3LN03SS
器件描述：General-Purpose Switching Device Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：37.18KB，共4页
Sponsor by e络盟器件资料摘要：
3LN03SS
No.8231-1/4
Features
•
Low ON-resistance.
•
High-speed switching.
•
2.5V drive.
• High ESD Voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
30 V
Gate-to-Source Voltage (*1) V
GSS
10 V
Drain Current (DC) I
D
0.35 A
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 1.4 A
Allowable Power Dissipation P
D
0.15 A
Channel Temperature Tch 150 A
Storage Temperature Tstg --55 to +150 W
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0 30 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=30V, V
GS
=0 1 µA
Gate-to-Source Leakage Current I
GSS
V
GS
=8V, V
DS
=0 1 µA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=100µA 0.4 1.3 V
Forward Transfer Admittance
yfs
V
DS
=10V, I
D
=180mA 0.36 0.6 S
R
DS
(on)1 I
D
=180mA, V
GS
=4V 0.7 0.9 Ω
Static Drain-to-Source On-State Resistance R
DS
(on)2 I
D
=90mA, V
GS
=2.5V 0.8 1.15 Ω
R
DS
(on)3 I
D
=10mA, V
GS
=1.5V 1.6 2.4 Ω
Input Capacitance Ciss V
DS
=10V, f=1MHz 30 pF
Output Capacitance Coss V
DS
=10V, f=1MHz 7 pF
Reverse Transfer Capacitance Crss V
DS
=10V, f=1MHz 3.5 pF
Marking : YG Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8231
22805PE TS IM TA-100963
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
3LN03SS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
No.8231-1/4
Features
•
Low ON-resistance.
•
High-speed switching.
•
2.5V drive.
• High ESD Voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
30 V
Gate-to-Source Voltage (*1) V
GSS
10 V
Drain Current (DC) I
D
0.35 A
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 1.4 A
Allowable Power Dissipation P
D
0.15 A
Channel Temperature Tch 150 A
Storage Temperature Tstg --55 to +150 W
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0 30 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=30V, V
GS
=0 1 µA
Gate-to-Source Leakage Current I
GSS
V
GS
=8V, V
DS
=0 1 µA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=100µA 0.4 1.3 V
Forward Transfer Admittance
yfs
V
DS
=10V, I
D
=180mA 0.36 0.6 S
R
DS
(on)1 I
D
=180mA, V
GS
=4V 0.7 0.9 Ω
Static Drain-to-Source On-State Resistance R
DS
(on)2 I
D
=90mA, V
GS
=2.5V 0.8 1.15 Ω
R
DS
(on)3 I
D
=10mA, V
GS
=1.5V 1.6 2.4 Ω
Input Capacitance Ciss V
DS
=10V, f=1MHz 30 pF
Output Capacitance Coss V
DS
=10V, f=1MHz 7 pF
Reverse Transfer Capacitance Crss V
DS
=10V, f=1MHz 3.5 pF
Marking : YG Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8231
22805PE TS IM TA-100963
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
3LN03SS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications