AA1A4Z
器件资料摘要：
1998©
Document No. D16160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AA1A4Z
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
• On-chip bias resistor
(R1 = 10 kΩ)
Complementary transistor with AN1A4Z
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 60 V
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 5V
Collector current (DC) IC(DC) 100 mA
Collector current (Pulse) IC(pulse) * 200 mA
Total power dissipation PT 250 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = 50 V, IE = 0 100 nA
DC current gain hFE1 ** VCE = 5.0 V, IC = 5.0 mA 135 340 600 −
DC current gain hFE2 ** VCE = 5.0 V, IC = 50 mA 100 300 −
Collector saturation voltage VCE(sat) ** IC = 5.0 mA, IB = 0.25 mA 0.04 0.2 V
Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.55 0.5 V
High level input voltage VIH ** VCE = 0.2 V, IC = 5.0 mA 2.0 0.8 V
Input resistance R1 7.0 10 13.0 kΩ
Turn-on time ton 0.2 µs
Storage time tstg 5.0 µs
Turn-off time toff
VCC = 5.0 V, RL = 1.0 kΩ
VI = 5.0 V, PW = 2.0 µs
duty cycle≤2 %
6.0 µs
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %
hFE CLASSIFICATION
Marking Q P K
hFE1 135 to 270 200 to 400 300 to 600
Document No. D16160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AA1A4Z
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
• On-chip bias resistor
(R1 = 10 kΩ)
Complementary transistor with AN1A4Z
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 60 V
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 5V
Collector current (DC) IC(DC) 100 mA
Collector current (Pulse) IC(pulse) * 200 mA
Total power dissipation PT 250 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = 50 V, IE = 0 100 nA
DC current gain hFE1 ** VCE = 5.0 V, IC = 5.0 mA 135 340 600 −
DC current gain hFE2 ** VCE = 5.0 V, IC = 50 mA 100 300 −
Collector saturation voltage VCE(sat) ** IC = 5.0 mA, IB = 0.25 mA 0.04 0.2 V
Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.55 0.5 V
High level input voltage VIH ** VCE = 0.2 V, IC = 5.0 mA 2.0 0.8 V
Input resistance R1 7.0 10 13.0 kΩ
Turn-on time ton 0.2 µs
Storage time tstg 5.0 µs
Turn-off time toff
VCC = 5.0 V, RL = 1.0 kΩ
VI = 5.0 V, PW = 2.0 µs
duty cycle≤2 %
6.0 µs
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %
hFE CLASSIFICATION
Marking Q P K
hFE1 135 to 270 200 to 400 300 to 600