1998©
Document No. D16156EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2403 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
• High current capacitance
Low collector saturation voltage
Complementary transistor with 2SB1572
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO 80 V
Collector to emitter voltage VCEO
60
V
Emitter to base voltage VEBO
6.0
V
Collector current (DC) IC(DC)
3.0
A
Collector current (pulse) IC(pulse) PW ≤ 10 ms
duty cycle ≤ 50 %
5.0 A
Base current (DC) IB(DC) 0.2 A
Base current (pulse) IB(pulse) PW ≤ 10 ms
duty cycle ≤ 50 %
0.4 A
Total power dissipation PT 16 cm
2
× 0.7 mm ceramic board mounted 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C