Power Transistors
1
Publication date: July 2004 SJD00321AED
2SC6012
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide safe oeration area
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Pulse measurement
Parameter Symbol Conditions Min Typ Max Unit
Emitter-base voltage (Collector open)
*
V
EBO
I
E
= 750 mA, I
C
= 07 V
Forward voltage
*
V
F
I
F
= 7.0 A −2V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 1 000 V, I
E
= 050µA
V
CB
= 1 700 V, I
E
= 01m
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 7.0 A 7 12 
Collector-emitter saturation voltage
*
V
CE(sat)
I
C
= 7.0 A, I
B
= 1.75 A 3.0 V
Base-emitter saturation voltage
*
V
BE(sat)
I
C
= 7.0 A, I
B
= 1.75 A 1.5 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.5 A, f = 0.5 MHz 2.1 MHz
Storage time t
stg
I
C
= 7.0 A, Resistance loaded 5.0 µs
Fall time t
f
I
B1
= 1.75 A, I
B2
= −3.5 A 0.5 µs
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
1 700 V
Collector-emitter voltage (E-B short) V
CES
1 700 V
Emitter-base voltage (Collector open) V
EBO
7V
Base current I
B
3A
Collector current I
C
15 A
Peak collector current
*
I
CP
24 A
Collector power dissipation P
C
60 W
T
a
= 25°C3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
15.5±0.5 3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
5˚
5˚
5˚
5˚
5˚
10.9±0.5
1
5˚
23
(10.0)
(1.2)
(2.0)
Solder Dip
3.3
±
0.3
5.5
±
0.3
(2.0)
26.5
±
0.5
(23.4)
22.0
±
0.5
18.6
±
0.5
(2.0)
φ 3.2±0.1
(4.5)
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Note)
*
: Non-repetitive peak collector current
Internal Connection
B
C
E