BC847BPDXV6T1
器件描述:Dual General Purpose Transistor
文件大小:95.82KB,共8页
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器件资料摘要:
Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
1 Publication Order Number:
BC847BPDXV6T1/D
BC847BPDXV6T1,
BC847BPDXV6T5
Dual General Purpose
Transistor
NPN/PNP Dual (Complimentary)
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT-563 which is designed for low
power surface mount applications.
• Lead-Free Solder Plating
MAXIMUM RATINGS - NPN
Rating Symbol Value Unit
Collector- Emitter Voltage V
CEO
45 V
Collector- Base Voltage V
CBO
50 V
Emitter- Base Voltage V
EBO
6.0 V
Collector Current -
Continuous
I
C
100 mAdc
MAXIMUM RATINGS - PNP
Rating Symbol Value Unit
Collector- Emitter Voltage V
CEO
-45 V
Collector- Base Voltage V
CBO
-50 V
Emitter- Base Voltage V
EBO
-5.0 V
Collector Current -
Continuous
I
C
-100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C
P
D
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance -
Junction-to-Ambient
R
JA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
500
(Note 1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance -
Junction-to-Ambient
R
JA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
T
J
, T
stg
- 55 to +150 °C
1. FR-4 @ Minimum Pad
SOT-563
CASE 463A
PLASTIC
1
2
3
6
5
4
Q
1
(1)(2)(3)
(4) (5) (6)
Q
2
ORDERING INFORMATION
http://onsemi.com
4F = Specific Device Code
D = Date Code
MARKING DIAGRAM
4F D
Device Package Shipping
BC847BPDXV6T1 SOT-563 4 mm pitch
4000/Tape & Reel
BC847BPDXV6T5 SOT-563 2 mm pitch
8000/Tape & Reel
BC847BPDX6T1