N-Channel Field Effect Transistor

4N600(3600)
















Ordering Information
Device Package Temp.
4N600T TO-220 0 to 150°C
4N600S TO-263 ( D
2
) 0 to 150°C

Absolute Maximum Rating
Symbol Parameter Max Unit
Drain Current
-Continues
4.0
2.5
I
D
(T
C
=25°C)
I
D
(T
C
=100°C)
-Pulsed 16
A
V
GSV
Gate Source Voltage ±20 V
Total Power Dissipation @ T
C
=25°C PD
Derate above 25°C
T
J
Operating and Storage
T
STG
Temperature Range

Description

The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for high voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.

The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2
surface
mount power package with a power dissipation up to 2 Watts
Features
• Critical DC Electrical parameters
specified at elevated Temp.
• Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
• Super high density cell design for
extremely low R
DS(ON)


V
DSS
= 600V
R
DS (ON)
= 1.9 Ω
I
D
= 4.0A

Bay Linear
Inspire the Linear Power

Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Te

75 W
0.59
W/°C
-55 to 150
°C
l: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com