Document No. D14857EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SA1720
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
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confirm that this is the latest version.
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© 2002
The 2SA1720 is a high-speed Darlington power transistor.
This transistor is ideal for high-precision control such as PWM
control for pulse motors or brushless motors in OA and FA equipment.
FEATURES
• Mold package that does not require an insulating board or insulation
bushing
On-chip C-to-E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO −100 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −8.0 V
Collector current (DC) IC(DC) −10, +3.0 A
Collector current (pulse) IC(pulse) PW ≤ 10 ms,
duty cycle ≤ 50%
–
+20 A
Base current (DC) IB(DC) −1.0 A
TC = 25°C 25 WTotal power dissipation PT
TA = 25°C 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
ORDERING INFORMATION
Part No. Package
2SA1720 Isolated TO-220
EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter