Philips Semiconductors Product specification
Thyristors BT258S-800R
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated,sensitive gate thyristor in SYMBOL PARAMETER MAX. UNIT
a plastic envelope, suitable for
surface mounting, intended for use in
general purpose switching and V
DRM
, V
RRM
Repetitive peak off-state voltages 800 V
phase control applications. These I
T(AV)
devices are intended to be interfaced I
T(RMS)
Average on-state current 5 A
directly to microcontrollers, logic I
TSM
RMS on-state current 8 A
integrated circuits and other low Non-repetitive peak on-state current 75 A
power gate trigger circuits.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN
NUMBER
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
, V
RRM
Repetitive peak off-state - 800 V
voltages
I
T(AV)
Average on-state current half sine wave; T
mb
≤ 111 ˚C - 5 A
I
T(RMS)
RMS on-state current all conduction angles - 8 A
I
TSM
Non-repetitive peak half sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 10 ms - 75 A
t = 8.3 ms - 82 A
I
2
tI
2
t for fusing t = 10 ms - 28 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 10 A; I
G
= 50 mA; - 50 A/µs
on-state current after dI
G
/dt = 50 mA/µs
triggering
I
GM
Peak gate current - 2 A
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125
1
˚C
temperature
1
2
3
tab
ak
g
1 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 2002 1 Rev 2.000