BSH112
N-channel enhancement mode field-effect transistor
Rev. 01 — 25 August 2000 Product specification
c
c
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
BSH112 in SOT23.
2. Features
a73 TrenchMOS™ technology
a73 Very fast switching
a73 Logic level compatible
a73 Subminiature surface mount package
a73 Gate-source ESD protection diodes.
3. Applications
a73 Relay driver
a73 High speed line driver
a73 Logic level translator.
4. Pinning information
1. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT23 N-channel MOSFET
2 source (s)
3 drain (d)
12
3
03ab44
d
g
s
03ab60