©2003 Fairchild Semiconductor Corporation Rev. A, August 2003
BC182B
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 50 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current - Continuous 100 mA
T
J,
T
STG
Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 2mA, I
B
= 0 50 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10µA, I
E
= 0 60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 6 V
I
CBO
Collector Cut-off Current V
CB
= 50V, V
BE
= 0 15 nA
I
EBO
Emitter-Base Leakage Current V
EB
= 4V, I
E
= 0 15 nA
On Characteristics
h
FE
DC Current Gain V
CE
= 5V, I
C
= 10µA
V
CE
= 5V, I
C
= 100mA
40
80
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
0.25
0.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 100mA, I
B
= 5mA 1.2 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 5V, I
C
= 2mA 0.55 0.7 V
Dynamic Characteristics
f
T
Current Gain Bandwidth Product V
CE
= 5V, I
C
= 10mA, f = 100MHz 150 MHz
C
ob
Output Capacitance V
CE
= 10V, I
C
= 0, f = 1MHz 5 pF
h
fe
Small Signal Current Gain V
CE
= 5V, I
C
= 2mA, f = 1KHz 240 500
NF Noise Figure V
CE
= 5V, I
C
= 0.2mA
R
S
= 2KΩ, f = 1KHz, BW = 200Hz
10 dB
BC182B
NPN General Purpose Amplifier
This device is designed for general purpose amplifier application at
collector currents to 100mA.
Sourced from process 10.
1. Collector 2. Base 3. Emitter
TO-92
1