Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
65 90
85 125
R
θJL
43 60
Junction and Storage Temperature Range
A
P
D
°C
1.4
0.9
-55 to 150
T
A
=70°C
I
D
6.5
5.2
30Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±8Gate-Source Voltage
Drain-Source Voltage 20
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AO3416, AO3416L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev 2: Nov 2004
Features
V
DS
(V) = 20V
I
D
= 6.5 A
R
DS(ON)
< 22mΩ (V
GS
= 4.5V)
R
DS(ON)
< 26mΩ (V
GS
= 2.5V)
R
DS(ON)
< 34mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AO3416 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AO3416L ( Green
Product ) is offered in a lead-free package.
S
G
D
TO-236
(SOT-23)
Top View
D
S
G
Alpha & Omega Semiconductor, Ltd.