DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK131
RF AMP. FOR VHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
Document No. P12449EJ2V0DS00 (2nd edition)
(Previous No. TC-1508)
Date Published March 1997 N
Printed in Japan 1983©
FEATURES
• Suitable for use as RF amplifier in VHF TV tuner.
• Low Crss : 0.05 pF TYP.
• High Gps : 23 dB TYP.
• Low NF : 1.3 dB TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Drain to Source Voltage VDSX 20 V
Gate1 to Source Voltage VG1S G018V
Gate2 to Source Voltage VG2S G018V
Drain Current ID 25 mA
Total Power Dissipation PT 200 mW
Channel Temperature Tch 125 G02C
Storage Temperature Tstg G0355 to +125 G02C
ELECTRICAL CHARACTERISTICS (TA = 25 G01C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source Breakdown Voltage BVDSX 20 V VG1S = VG2S = G012 V, ID = 10 G01A
Drain Current IDSS 71025mAVDS = 6 V, VG2S = 3 V, VG1S = 0
Gate1 to Source Cutoff Voltage VG1S(OFF) G012.0 V VDS = 8 V, VG2S = 0, ID = 5 G01A
Gate2 to Source Cutoff Voltage VG2S(OFF) G011.5 V VDS = 8 V VG1S = 0, ID = 5 G01A
Gate1 Reverse Current IG1SS G0220 nA VDS = 0, VG1S = G028 V, VG2S = 0
Gate2 Reverse Current IG2SS G0220 nA VDS = 0, VG2S = G028 V, VG1S = 0
Forward Transfer Admittance G03yfsG03 22 28 mS VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 1 kHz
Input Capacitance Ciss 4.0 5.0 6.5 pF VDS = 6 V, VG2S = 3 V, ID = 10 mA
Output Capacitance Coss 2.2 2.9 3.7 pF f = 1 MHz
Reverse Transfer Capacitance Crss 0.05 0.08 pF
Power Gain Cps 21 24 dB VDS = 10 V, VG2S = 5 V, ID = 10 mA
Noise Figure NF 1.2 2.5 dB f = 200 MHz
IDSS classification V11 7-13 mA V12 11-19 mA V13 17-25 mA
PACKAGE DIMENSIONS
(Unit: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate 2
Gate 1
5° 5°
5° 5°
0 to 0.1
0.8
2.9±0.2
(1.8) (1.9)
0.95
0.85
1.1
+0.2 −
3.1
0.16
+0.1 −
0.06
0.4
41
32
+0.1 −
0.05
2.8
+0.2
−0.3
1.5
+0.2
−0.1
0.6
+0.1 −
0.05
0.4
+0.1 −
0.05
0.4
+0.1 −
0.05