EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

Am29LV320MT

器件描述:32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
器件厂商:AMD [Advanced Micro Devices]
厂商主页:http://www.amd.com
文件大小:1395.84KB,共61页
Sponsor by e络盟
器件资料摘要:
Refer to A
This Data Sheet states AMD’s current technical specificat
Sheet may be revised by subsequent versions or modifica
DATASHEET
Am29LV320MT/B
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit
3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
— 3 V for read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process
technology
■ SecSi (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
■ Flexible sector architecture
— Sixty-three 32 Kword/64-Kbyte sectors
— Eight 4 Kword/8 Kbyte boot sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■ Minimum 100,000 erase cycle guarantee per sector
■ 20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
■ High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 µs typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■ Low power consumption (typical values at 3.0 V, 5
MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
■ Package options
— 48-pin TSOP
— 48-ball Fine-pitch BGA
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■ Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— WP#/ACC input:
Write Protect input (WP#) protects top or bottom two
sectors regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
Publication# 26518 Rev: B Amendment/0
Issue Date: May 16, 2003
MD’s Website (www.amd.com) for the latest information.
ions regarding the Products described herein. This Data
tions due to changes in technical specifications.