1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage VDS 300
VDSX *5 270
Continuous drain current ID ±12
Pulsed drain current ID(puls] ±48
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 12
Maximum Avalanche Energy EAS *1 193
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25
°C
2.16
Tc=25
°C
35
Operating and storage Tch +150
temperature range Tstg
Isolation Voltage VISO *6 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3580-01MR
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=300V VGS=0V
VDS=240V VGS=0V
VGS=±30V
ID=6A
ID=6A VDS=25V
VCC=150V ID=6A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
3.57
58.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250
µ
A VGS=0V
ID= 250
µ
A VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=150V
ID=12A
VGS=10V
L=100
µ
H Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
300
3.5 4.5
25
250
10 100
1.22 0.28
5 10.5
980 1470
170 255
5.5 11
14.5 29
6.5 9.8
28 42
46
23 34.5
9.7 14.6
5.6 11.2
12
1.20 1.80
0.2
1.80
-55 to +150
Outline Drawings
*1 L=2.32mH, Vcc=48V *2 Tch=150°C
<
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
< <<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
=
<
VGS=10V
*4 VDS 300V *5 VGS=-30V *6 t=60sec f=60Hz