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MOS FIELD EFFECT TRANSISTOR
2SJ598
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14656EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan

2000, 2001
The mark shows major revised points.

DESCRIPTION
The 2SJ598 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.

FEATURES
• Low on-state resistance:
RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A)
RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)
• Low Ciss: Ciss = 720 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS –60 V
Gate to Source Voltage (VDS = 0 V) VGSS m20 V
Drain Current (DC) (TC = 25°C) ID(DC) m12 A
Drain Current (pulse)
Note1
ID(pulse) m30 A
Total Power Dissipation (TC = 25°C) PT 23 W
Total Power Dissipation

(TA = 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note2
IAS –12 A
Single Avalanche Energy
Note2
EAS 14.4 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V

ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ598 TO-251 (MP-3)
2SJ598-Z TO-252 (MP-3Z)

(TO-251)



(TO-252)