Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
14.2 20
40 50
R
θJL
0.56 1.5
Junction and Storage Temperature Range -55 to 175
mJ
W
50
W
°C
Repetitive avalanche energy L=0.1mH
C
140
Power Dissipation
A
AI
D
Avalanche Current
C
30 A
200
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
C
=25°C
G
T
C
=100°C
B
30
85
73
T
A
=25°C
P
DSM
2.5
Power Dissipation
B
T
C
=25°C
P
D
100
T
C
=100°C
T
A
=70°C 1.6
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
AOD414, AOD414L( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev 4:Nov 2004
Features
V
DS
(V) = 30V
I
D
= 85A
R
DS(ON)
< 5.2mΩ (V
GS
= 10V)
R
DS(ON)
< 7.0mΩ (V
GS
= 4.5V)
General Description
The AOD414 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. AOD414L ( Green Product ) is
offered in a lead-free package.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.