2SK3210
器件描述：Silicon N Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：35.22KB，共5页
Sponsor by e络盟器件资料摘要：
2SK3210(L), 2SK3210(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-760(Z)
Target Specification, 1st. Edition
Dec. 1, 1998
Features
• Low on-resistance
R
DS
=35mW typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-760(Z)
Target Specification, 1st. Edition
Dec. 1, 1998
Features
• Low on-resistance
R
DS
=35mW typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S