Transistors
1
Publication date: April 2003 SJC00201BED
2SD0966 (2SD966)
Silicon NPN epitaxial planar type
For low-frequency amplification
For stroboscope
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
40 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
5A
Peak collector current I
CP
8A
Collector power dissipation P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 020V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 07
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 10 V, I
E
= 0 0.1 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 7 V, I
C
= 0 0.1 µA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= 2 V, I
C
= 0.5 A 180 600 
h
FE
V
CE
= 2 V, I
C
= 2 A 150
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= 3 A, I
B
= 0.1 A 1 V
Transition frequency f
T
V
CB
= 6 V, I
E
= −50 mA, f = 200 MHz 150 MHz
Collector output capacitance C
ob
V
CB
= 20 V, I
E
= 0, f = 1 MHz 50 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
5.9±0.2
0.7±0.1
4.9±0.2
8.6
±
0.2
0.7
+0.3 –0.2
13.5
±
0.5
2.54±0.15
(3.2)
(1.27)(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
132
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Rank P Q R
h
FE1
180 to 270 230 to 380 340 to 600
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Note) The part number in the parenthesis shows conventional part number.