2SC5899
器件描述：Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
器件厂商：SANYO [Sanyo Semicon Device]
文件大小：29.74KB，共4页
Sponsor by e络盟器件资料摘要：
2SC5899
No.7538-1/4
Features
•
High speed.
• High breakdown voltage(V
CBO
=1700V).
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
1700 V
Collector-to-Emitter Voltage V
CEO
800 V
Emitter-to-Base Voltage V
EBO
5V
Collector Current I
C
15 A
Collector Current (Pulse) I
CP
35 A
Collector Dissipation P
C
3.0 W
Tc=25°C95
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current
I
CBO
V
CB
=800V, I
E
=0 10 µA
I
CES
V
CE
=1700V, R
BE
=0 1.0 mA
Collector-to-Emitter Breakdown Voltage V(BR)CEO I
C
=10mA, R
BE
=∞ 800 V
Emitter Cutoff Current I
EBO
V
EB
=4V, I
C
=0 1.0 mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7538
2SC5899
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Package Dimensions
unit : mm
2174A
[2SC5899]
31504 TS IM TA-100536
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
21.0
5.0
22.0
0.8
20.4
4.0
16.0
3.4
2.0
2.8
2.1
5.45
5.45
0.7
0.9
3.5
8.0
5.6
3.1
12 3
No.7538-1/4
Features
•
High speed.
• High breakdown voltage(V
CBO
=1700V).
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
1700 V
Collector-to-Emitter Voltage V
CEO
800 V
Emitter-to-Base Voltage V
EBO
5V
Collector Current I
C
15 A
Collector Current (Pulse) I
CP
35 A
Collector Dissipation P
C
3.0 W
Tc=25°C95
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current
I
CBO
V
CB
=800V, I
E
=0 10 µA
I
CES
V
CE
=1700V, R
BE
=0 1.0 mA
Collector-to-Emitter Breakdown Voltage V(BR)CEO I
C
=10mA, R
BE
=∞ 800 V
Emitter Cutoff Current I
EBO
V
EB
=4V, I
C
=0 1.0 mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7538
2SC5899
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Package Dimensions
unit : mm
2174A
[2SC5899]
31504 TS IM TA-100536
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
21.0
5.0
22.0
0.8
20.4
4.0
16.0
3.4
2.0
2.8
2.1
5.45
5.45
0.7
0.9
3.5
8.0
5.6
3.1
12 3