2N3819
Vishay Siliconix
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
www.vishay.com
7-1
N-Channel JFET
C0080C0082C0079C0068C0085C0067C0084C0032C0083C0085C0077C0077C0065C0082C0089
V
GS(off)
(V) V
(BR)GSS
Min (V) g
fs
Min (mS) I
DSS
Min (mA)
C0118 –8 –25 2 2
C0070C0069C0065C0084C0085C0082C0069C0083 C0066C0069C0078C0069C0070C0073C0084C0083 C0065C0080C0080C0076C0073C0067C0065C0084C0073C0079C0078C0083
C0068 Excellent High-Frequency Gain:
Gps 11 dB @ 400 MHz
C0068 Very Low Noise: 3 dB @ 400 MHz
C0068 Very Low Distortion
C0068 High ac/dc Switch Off-Isolation
C0068 High Gain: A
V
= 60 @ 100 C0109A
C0068 Wideband High Gain
C0068 Very High System Sensitivity
C0068 High Quality of Amplification
C0068 High-Speed Switching Capability
C0068 High Low-Level Signal Amplification
C0068 High-Frequency Amplifier/Mixer
C0068 Oscillator
C0068 Sample-and-Hold
C0068 Very Low Capacitance Switches
C0068C0069C0083C0067C0082C0073C0080C0084C0073C0079C0078
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see
Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
C0065C0066C0083C0079C0076C0085C0084C0069C0032C0077C0065C0088C0073C0077C0085C0077C0032C0082C0065C0084C0073C0078C0071C0083
Gate-Source/Gate-Drain Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150C0095C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150C0095C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.) 300C0095C. . . . . . . . . . . . . . . . . . .
Power Dissipation
a
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/C0095C above 25C0095C