2SK3669
2003-03-12 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
2SK3669

Switching Regulators, for Audio Amplifier and Motor
Drive Applications


Gb7G20 Low drain-source ON resistance: R
DS

(ON)
= 95 mΩ (typ.)
Gb7G20 High forward transfer admittance: |Y
fs
| = 6 S (typ.)
Gb7G20 Low leakage current: I
DSS
= 100 µA (max) (V
DS
= 100 V)
Gb7G20 Enhancement-mode : V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
100 V
Drain-gate voltage (R
GS
G3d 20 kG57) V
DGR
100G20 V
Gate-source voltage V
GSS
Gb120 V
DC (Note 1) I
D
10
Pulse (t
w
≤ 10 ms)
(Note 1)
I
DP
15
Drain current
Pulse (t
w
≤ 1 ms)
(Note 1)
IDP 28
A
Drain power dissipation (Tc G3d 25°C) P
D
20 W
Single pulse avalanche energy
(Note 2)
E
AS
280 mJ
Avalanche current I
AR
10 A
Repetitive avalanche energy
(Note 3)
E
AR
2 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
G2d55 to 150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch−c)
6.25 °C/ W
Thermal resistance, channel to
ambient
R
th (ch−a)
125 °C/ W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
G3d 50 V, T
ch
G3d 25°C (initial), L G3d 3.44 mH, I
AR
G3d 10 A, R
G
G3d 25 G57
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.


Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)