2SK3538
2003-02-14 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3538

Switching Regulator, DC-DC Converter Applications


Gb7G20 Low drain-source ON resistance: R
DS (ON)
= 75 mΩ (typ.)
Gb7G20 High forward transfer admittance: |Y
fs
| = 7.0 S (typ.)
Gb7G20 Low leakage current: I
DSS
= 100 µA (V
DS
= 500 V)
Gb7G20 Enhancement-mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
500 V
Drain-gate voltage (R
GS
G3d 20 kG57) V
DGR
500 V
Gate-source voltage V
GSS
Gb130 V
DC (Note 1)
I
D
8
Drain current
Pulse (Note 1)
I
DP
32
A
Drain power dissipation (Tc G3d 25°C) P
D
65 W
Single pulse avalanche energy
(Note 2)
E
AS
312 mJ
Avalanche current I
AR
8 A
Repetitive avalanche energy
(Note 3)
E
AR
6.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
G2d55 to 150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
1.92 °C/W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
G3d 90 V, T
ch
G3d 25°C (initial), L G3d 8.3 mH, I
AR
G3d 8 A, R
G
G3d 25 G57
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.


Unit: mm


JEDEC ―
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
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