285
Silicon MOS FETs (Small Signal)
2SK0656 (2SK656)
Silicon N-Channel MOS FET
For switching
a73 Features
a71High-speed switching
a71Small drive current owing to high input inpedance
a71High electrostatic breakdown voltage
Internal Connection
G
R
1
D
S
R
2
1: Source
2: Drain
3: Gate
NS-B1 Package
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
231
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±0.2
(0.8)
(0.8)
15.6
±0.5
a73 Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
200
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
a73 Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
OH
V
OL
R
1
+ R
2
*
1
C
iss
C
oss
C
rss
t
on
*
2
t
off
*
2
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100µA, V
GS
= 0
I
D
= 100µA, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DD
= 5V, V
GS
= 1V, R
L
= 200Ω
V
DD
= 5V, V
GS
= 5V, R
L
= 200Ω
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200Ω
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200Ω
*
1
Resistance ratio R
1
/R
2
= 1/50
*
2
Pulse measurement
min
40
50
1.5
20
4.5
100
typ
35
9
4.5
1.1
Unit
µA
µA
V
V
Ω
mS
V
V
kΩ
pF
pF
pF
µs
µs
max
10
80
3.5
50
1
200
1
1
Note) The part number in the parenthesis shows conventional part number.
unit: mm