277
Silicon MOS FETs (Small Signal)
unit: mm
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
a73 Features
a71Low ON-resistance R
DS(on)
a71High-speed switching
a71Allowing to be driven directly by CMOS and TTL
a73 Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
80
20
±0.5
±1
750
150
−55 to +150
Unit
V
V
A
A
mW
°C
°C
a73 Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
*
1
| Y
fs
|
C
iss
C
oss
C
rss
t
on
*
2
t
off
*
2
Conditions
V
DS
= 60V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
DS
= 100µA, V
GS
= 0
I
D
= 1mA, V
DS
= V
GS
I
D
= 0.5A, V
GS
= 10V
I
D
= 0.2A, V
DS
= 15V, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
*
1
Pulse measurement
*
2
t
on
, t
off
measurement circuit
min
80
1.5
typ
2
300
45
30
8
15
20
Unit
µA
µA
V
V
Ω
mS
pF
pF
pF
ns
ns
max
10
0.1
3.5
4
V
in
= 10V
t = 1µS
f = 1MHZ
50Ω
68Ω
t
on
t
off
V
in
10%
90%
10%
90%
V
out
V
in
V
out
V
DD
= 30V
V
out
1: Source
2: Drain
3: Gate
JEDEC: TO-92
EIAJ: SC-43
TO-92-A1 Package
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0±0.2
5.1
±0.2
12.9
±0.5
2.3
±
0.2
0.7
±0.2
Note) The part number in the parenthesis shows conventional part number.