Silicon Junction FETs (Small Signal)
1
Publication date: April 2002 SJF00033AED
2SK3426
Silicon N-Channel Junction
For impedance conversion in low frequency
For electret capacitor microphone
a73 Features
• High mutual conductance g
m
• Low noise voltage of NV
a73 Absolute Maximum Ratings T
a
= 25°C
1: Drain
2: Source
3: Gate
SSSMini3-F1 Package
Unit: mm
Parameter Symbol Rating Unit
Drain-source voltage V
DSO
20 V
Drain-gate voltage V
DGO
20 V
Drain-source current I
DSO
2mA
Drain-gate current I
DGO
Gate-source current I
GSO
2mA
Allowable power dissipation P
D
100 mW
Operating ambient temperature T
opr
−20 to

+80 °C
Storage temperature T
stg
−55 to

+125 °C
Marking Symbol: 4E
Parameter Symbol Conditions Min Typ Max Unit
Drain current I
D
*
1
V
DS
= 2.0 V, R
D
= 2.2 kΩ ± 1% 100 330 µA
I
DSS
V
DS
= 2.0 V, R
D
= 2.2 kΩ ± 1%, V
GS
= 0 107 310
Mutual conductance g
m
V
D
= 2.0 V, V
GS
= 0, f = 1 kHz 660 1 300 µS
Noise voltage NV V
D
= 2.0 V, R
D
= 2.2 kΩ ± 1% 8 µV
C
O
= 5 pF, A-Curve
Voltage gain G
V1
V
D
= 2.0 V, R
D
= 2.2 kΩ ± 1% −8.5 −3.0 dB
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
G
V2
V
D
= 12 V, R
D
= 2.2 kΩ ± 1% −5.0 − 0.5
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
G
V3
V
D
= 1.5 V, R
D
= 2.2 kΩ ± 1% −9.0 −3.5
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
∆G
V
. f
*
2
V
D
= 2.0 V, R
D
= 2.2 kΩ ± 1% 0 1.5
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz to 70 Hz
Voltage gain difference G
V2
− G
V1
 04.0dB
G
V1
− G
V3
 015
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
1: I
D
is assured for I
DSS
.
*
2: ∆G
V
. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
1.20
±
0.05
0.52
±
0.03
0 to 0.01
0.15 max.
5˚
0.15 min.
0.80
±
0.05
0.15 min.
0.33
(0.40)(0.40)
12
3
5˚
0.80±0.05
1.20±0.05
+0.05
–0.02
0.10
+0.05
–0.02
0.23
+0.05
–0.02