2SK3174A
器件描述：Silicon N Channel MOS FET UHF Power Amplifier
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：81.56KB，共8页
Sponsor by e络盟器件资料摘要：
2SK3174A
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-1451 (Z)
1st. Edition
September 2001
Features
• High power output, High gain, High efficiency
P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz)
• Compact package
Suitable for push - pull circuit
Outline
RFPAK-F
1
3
5
2
4
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
DD
GG
S
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
In AC testing, the part should be mounted on heat sink with thermal compound.
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-1451 (Z)
1st. Edition
September 2001
Features
• High power output, High gain, High efficiency
P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz)
• Compact package
Suitable for push - pull circuit
Outline
RFPAK-F
1
3
5
2
4
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
DD
GG
S
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
In AC testing, the part should be mounted on heat sink with thermal compound.