2SK3077
器件描述：900 MHz BAND AMPLIFIER APPLICATIONS
器件厂商：TOSHIBA [Toshiba Semiconductor]
文件大小：111.23KB，共4页
Sponsor by e络盟器件资料摘要：
2SK3077
2001-12-26 1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
G6cG20Output Power : P
O
= 15.0 dBmW (Min.)
G6cG20Gain : G
P
= 15.0 dB (Min.)
G6cG20Drain Efficiency : η
D
= 20% (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage V
DSS
10 V
Gate-Source Voltage V
GSS
5 V
Drain Current I
D
0.1 A
Power Dissipation P
D*
0.1 W
Channel Temperature T
ch
150 °C
Storage Temperature Range T
stg
−45~150 °C
*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
MARKING
Unit: mm
JEDEC —
JEITA —
TOSHIBA 2−2K1D
2001-12-26 1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
G6cG20Output Power : P
O
= 15.0 dBmW (Min.)
G6cG20Gain : G
P
= 15.0 dB (Min.)
G6cG20Drain Efficiency : η
D
= 20% (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage V
DSS
10 V
Gate-Source Voltage V
GSS
5 V
Drain Current I
D
0.1 A
Power Dissipation P
D*
0.1 W
Channel Temperature T
ch
150 °C
Storage Temperature Range T
stg
−45~150 °C
*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
MARKING
Unit: mm
JEDEC —
JEITA —
TOSHIBA 2−2K1D