1
Publication date: January 2002 SJF00006BED
Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
a73 Features
a71 High mutual conductance g
m
a71 Low noise type
a71 Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini3-G1 Package
a73 Absolute Maximum Ratings (T
a
= 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
ch
T
stg
Ratings
30
−30
20
10
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
a73 Electrical Characteristics (T
a
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS
*
I
GSS
V
GSC
g
m
C
iss
C
rss
NV
Conditions
V
DS
= 10 V, V
GS
= 0
V
GS
= −30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 10 µA
V
DS
= 10 V, I
D
= 0.5 mA, f = 1 kHz
V
DS
= 10 V, V
GS
= 0, f = 1 kHz
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
V
DS
= 30 V, I
D
= 1 mA, G
V
= 80 dB
R
g
= 100 kΩ, Function = FLAT
min
0.5
− 0.1
4
max
12
−100
−1.5
Unit
mA
nA
V
mS
pF
pF
mV
*
I
DSS
rank classification
Marking Symbol (Example): 1O
typ
13
14
3.5
60
Runk
I
DSS
(mA)
Marking Symbol
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Note) The part number in the parenthesis shows conventional part number.
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Unit: mm