Transistors
1
Publication date: February 2003 SJC00250BED
2SD2216L
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1462L
■ Features
• High forward current transfer ratio h
FE
• Mold lead-less type package, allowing downsizing and thinning
of the equipment and automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Collector power dissipation
*
P
C
150 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 060V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 05
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 07
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 10 V, I
B
= 0 100 µA
Forward current transfer ratio h
FE1
V
CE
= 10 V, I
C
= 2 mA 180 390 
h
FE2
V
CE
= 2 V, I
C
= 100 mA 90
Collector-emitter saturation voltage V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA 0.1 0.3 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 3.5 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
0.80
±
0.05
0.05
±
0.03
0.20
±
0.03
0.50
1.00±0.05 0.60±0.05
0.60 0.05±0.03
0.30±0.03
0.020±0.010
1
2
4
3
2
1
3
4
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1 : Base
2 : Emitter
3 : Collector
4 : Collector
ML4-N1 Package
Marking Symbol: L
Note)
*
: Printed circuit board: Copper foil area of 20.0 mm
2
or more, and
the board thickness of 1.6 mm for the collector portion