Transistors
1
Publication date: November 2002 SJC00193BED
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification
Complementary to 2SB0643 (2SB643)
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
25 V
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
0.5 A
Peak collector current I
CP
1A
Collector power dissipation
*
P
C
600 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 030V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 025
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 07
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 µA
Base-emitter saturation voltage I
CEO
V
CE
= 20 V, I
B
= 01µA
Forward current transfer ratio h
FE1
*
V
CE
= 10 V, I
C
= 10 mA 85 340 
h
FE2
V
CE
= 10 V, I
C
= 500 mA 40 90
Collector-emitter saturation voltage V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA 0.35 0.6 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 6 15 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
6.9±0.1
2.5±0.1
(1.0)
(1.0)
(1.5)
(0.85) 0.45±0.05
0.55±0.1
(2.5)(2.5)
213
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Note) The part number in the parenthesis shows conventional part number.