2SD0968A
器件描述：For Low-Frequency Driver Amplification
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：72.23KB，共3页
Sponsor by e络盟器件资料摘要：
1
Publication date: December 2003 SJC00202DED
Transistors
2SD0968A (2SD968A)
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SB0789A (2SB789A)
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Large collector power dissipation P
C
• Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
4.5±0.1
3.0±0.15
45˚
2.6
±
0.1
0.4 max.
1.6±0.2 1.5±0.1
4.0
2.5
±
0.1
3˚
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08 0.4±0.040.4±0.08
12
3
1.5±0.1
3˚
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Unit: mm
Marking Symbol: V
Note) The part numbers in the parenthesis show conventional part number.
Note)
*
: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion.
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
120 V
Collector-emitter voltage (Base open) V
CEO
120 V
Emitter-base voltage (Collector open) V
EBO
5V
Peak collector current I
CP
1A
Collector current I
C
0.5 A
Collector power dissipation
*
P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 100 µA, I
B
= 0 120 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 05
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= 10 V, I
C
= 150 mA 130 330
h
FE2
V
CE
= 5 V, I
C
= 500 mA 50
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.2 0.6 V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.85 1.20 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 120 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 20 pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank R S
h
FE1
130 to 220 185 to 330
Publication date: December 2003 SJC00202DED
Transistors
2SD0968A (2SD968A)
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SB0789A (2SB789A)
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Large collector power dissipation P
C
• Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
4.5±0.1
3.0±0.15
45˚
2.6
±
0.1
0.4 max.
1.6±0.2 1.5±0.1
4.0
2.5
±
0.1
3˚
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08 0.4±0.040.4±0.08
12
3
1.5±0.1
3˚
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Unit: mm
Marking Symbol: V
Note) The part numbers in the parenthesis show conventional part number.
Note)
*
: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion.
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
120 V
Collector-emitter voltage (Base open) V
CEO
120 V
Emitter-base voltage (Collector open) V
EBO
5V
Peak collector current I
CP
1A
Collector current I
C
0.5 A
Collector power dissipation
*
P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 100 µA, I
B
= 0 120 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 05
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= 10 V, I
C
= 150 mA 130 330
h
FE2
V
CE
= 5 V, I
C
= 500 mA 50
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.2 0.6 V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.85 1.20 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 120 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 20 pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank R S
h
FE1
130 to 220 185 to 330