Transistors
1
Publication date: November 2002 SJC00195BED
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
■ Features
• High collector-emitter voltage (Base open) V
CEO
• High transition frequency f
T
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
6.9±0.1
2.5±0.1
(1.0)
(1.0)
(1.5)
(0.85) 0.45±0.05
0.55±0.1
(2.5)(2.5)
213
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank P Q R
h
FE
30 to 100 60 to 150 100 to 220
Parameter Symbol Rating Unit
Collector-base voltage
2SD0662 V
CBO
250 V
(Emitter open)
2SD0662B 400
Collector-emitter voltage
2SD0662 V
CEO
200 V
(Base open)
2SD0662B 400
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
70 mA
Collector power dissipation P
C
600 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SD0662 V
CEO
I
C
= 100 µA, I
B
= 0 200 V
(Base open)
2SD0662B 400
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 05
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 100 V, I
B
= 02µA
Forward current transfer ratio h
FE
*
V
CE
= 10 V, I
C
= 5 mA 30 220 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 50 mA, I
B
= 5 mA 1.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz 50 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 10 pF
(Common base, input open circuited)
Note) The part numbers in the parenthesis show conventional part number.