2SC752(G)TM
2003-03-25 1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC752(G)TM

Ultra High Speed Switching Applications
Computer, Counter Applications


Gb7G20 High transition frequency: f
T
= 400 MHz (typ.)
Gb7G20 Low saturation voltage: V
CE (sat)
= 0.3 V (max)
Gb7G20 High speed switching time: t
stg
= 15 ns (typ.)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
40 V
Collector-emitter voltage V
CEO
15 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
200 mA
Base current I
B
40 mA
Collector power dissipation P
C
400 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
G2d55~125 °C


Electrical Characteristics (Ta G3d 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
G3d 40 V, I
E
G3d 0 GbeG20 Gbe 0.1 G6dA
Emitter cut-off current I
EBO
V
EB
G3d 5 V, I
C
G3d 0 Gbe Gbe 0.1 G6dA
h
FE (1)
(Note)
V
CE
G3d 1 V, I
C
G3d 10 mA 40 Gbe 240
DC current gain
h
FE (2)
V
CE
G3d 1 V, I
C
G3d 100 mA 20 Gbe Gbe

Collector-emitter saturation voltage V
CE (sat)
I
C
G3d 20 mA, I
B
G3d 1 mA Gbe Gbe 0.3 V
Base-emitter saturation voltage V
BE (sat)
I
C
G3d 20 mA, I
B
G3d 1 mA Gbe Gbe 1.0 V
Transition frequency f
T
V
CE
G3d 10 V, I
C
G3d 10 mA 200 400 Gbe MHz
Collector output capacitance C
ob
V
CB
G3d 10 V, I
E
G3d 0, f G3d 1 MHz Gbe 4 6 pF
Turn-on time t
on
GbeG20 70 100
Storage time t
stg
GbeG20 15 30 Switching time
Fall time t
f



Duty cycle
G3c
G3d
2％
GbeG20 30 70
ns
Note: h
FE
classification R: 40~80, O: 70~140, Y: 120~240


Unit: mm



JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)