Transistors
1
Publication date: December 2002 SJC00278BED
2SC5556
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High transition frequency f
T
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 015V
Collector-emitter voltage (Base open) V
CEO
I
C
= 100 µA, I
B
= 0
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 10 V, I
E
= µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 2 V, I
C
= 01µA
Forward current transfer ratio h
FE
V
CE
= 8 V, I
C
= 20 mA 110 250 
Transition frequency f
T
V
CE
= 8 V, I
C
= 20 mA, f = 800 MHz 5 6 GHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 0.9 1.2 pF
(Common base, input open circuited)
Foward transfer gain S
21e

2
V
CE
= 8 V, I
C
= 20 mA, f = 800 MHz 7.5 10.0 dB
Maximum unilateral power gain G
UM
V
CE
= 8 V, I
C
= 20 mA, f = 800 MHz 11.5 dB
Noise figure NF V
CE
= 8 V, I
C
= 20 mA, f = 800 MHz 1.7 dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
10 V
Emitter-base voltage (Collector open) V
EBO
2V
Collector current I
C
80 mA
Collector power dissipation
*
P
C
300 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Marking Symbol: 3K
Note)
*
: Copper plate at the collector is more than 1 cm
2
in area, 1.0 mm in thickness
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package