2SC5376F
2002-01-16 1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376F

Audio Frequency General Purpose Amplifier Applications
For Muting and Switching Applications



Gb7G20 Low Collector Saturation Voltage: V
CE (sat) (1)
= 15 mV (typ.)
@I
C
= 10 mA/I
B
= 0.5 mA
Gb7G20 High Collector Current: I
C
= 400 mA (max)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
15 V
Collector-emitter voltage V
CEO
12 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
400 mA
Base current I
B
50 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 Gb0C
Storage temperature range T
stg
G2d55 to 125 Gb0C


Marking
Equivalent Circuit (top view)



Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-2HA1A

F A
Type Name
h
FE
Classification