Transistors
1
Publication date: December 2002 SJC00283BED
2SC5295J
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■ Features
• High transition frequency f
T
• Low collector output capacitance (Common base, input open cir-
cuited) C
ob
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 10 V, I
E
= 01µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 1 V, I
C
= µA
Forward current transfer ratio
*
h
FE
V
CE
= 8 V, I
C
= 20 mA 50 170 
Transition frequency f
T
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz 7.0 8.5 GHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 0.6 1.0 pF
(Common base, input open circuited)
Foward transfer gain S
21e

2
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz 7 9 dB
Maximum unilateral power gain G
UM
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz 10 dB
Noise figure NF V
CE
= 8 V, I
C
= 7 mA, f = 1.5 GHz 2.2 3.0 dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
10 V
Emitter-base voltage (Collector open) V
EBO
2V
Collector current I
C
65 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Marking Symbol: 3S
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q R
h
FE
50 to 120 100 to 170
0.27±0.02
3
12
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package