1
Transistors
Publication date: March 2003 SJC00163AED
2SC4627J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
T
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
3V
Collector current I
C
15 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 030V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
=
Base-emitter voltage V
BE
V
CB
= 6 V, I
E
= −1 mA 720 mV
Forward current transfer ratio
*
h
FE
V
CB
= 6 V, I
E
= −1 mA 65 160 
Transition frequency f
T
V
CB
= 6 V, I
E
= −1 mA, f = 200 MHz 450 650 MHz
Reverse transfer capacitance C
re
V
CB
= 6 V, I
E
= −1 mA, f = 10.7 MHz 0.8 1.0 pF
(Common emitter)
Power gain G
P
V
CB
= 6 V, I
E
= −1 mA, f = 100 MHz 24 dB
Noise figure NF V
CB
= 6 V, I
E
= −1 mA, f = 100 MHz 3.3 dB
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank C
h
FE
65 to 160
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
0.27±0.02
3
12
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: U