Transistors
1
Publication date: February 2003 SJC00133BED
2SC3526H
Silicon NPN epitaxial planar type
For display video output
■ Features
• High transition frequency f
T
• Small collector output capacitance (Common base, input open cir-
cuited) C
ob
• Wide current range
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
110 V
Collector-emitter voltage V
CER
100 V
(Resistor between B and E)
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
3.5 V
Collector current I
C
150 mA
Peak collector current I
CP
300 mA
Collector power dissipation P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 100 µA, I
E
= 0 110 V
Collector-emitter voltage
(Resistor
V
CER
I
C
= 500 µA, R
BE
= 470 Ω 100 V
between B and E)
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 050
Emitter-base voltage (Collector open) V
EBO
I
E
= 100 µA, I
C
= 0 3.5 V
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 35 V, I
B
= 010µA
Forward current transfer ratio h
FE
V
CE
= 5 V, I
C
= 100 mA 20 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 150 mA, I
B
= 15 mA 0.5 V
Transition frequency f
T1
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz 300 MHz
f
T2
V
CB
= 10 V, I
E
= −110 mA, f = 200 MHz 350
Collector output capacitance C
ob
V
CB
= 30 V, I
E
= 0, f = 1 MHz 3 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
5.9±0.2
0.7±0.1
4.9±0.2
8.6
±
0.2
0.7
+0.3 –0.2
13.5
±
0.5
2.54±0.15
(3.2)
(1.27)(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
132