2SB1470
器件描述：For Power Amplification
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：84.45KB，共4页
Sponsor by e络盟器件资料摘要：
Power Transistors
1
Publication date: March 2003 SJD00076BED
2SB1470
Silicon PNP triple diffusion planar type darlington
For power amplification
Complementary to 2SD2222
■ Features
• Optimum for 120 W HiFi output
• High forward current transfer ratio h
FE
• Low collector-emitter saturation voltage V
CE(sat)
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−160 V
Collector-emitter voltage (Base open) V
CEO
−160 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−8A
Peak collector current I
CP
−15 A
Collector power dissipation P
C
150 W
T
a
= 25°C 3.5
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Internal Connection
B
C
E
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −30 mA, I
B
= 0 −160 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −160 V, I
E
= 0 −100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −160 V, I
B
= 0 −100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −100 µA
Forward current transfer ratio h
FE1
V
CE
= −5 V, I
C
= −1 A 1 000
h
FE2
*
V
CE
= −5 V, I
C
= −7 A 3 500 20 000
Collector-emitter saturation voltage V
CE(sat)
I
C
= −7 A, I
B
= −7 mA −3V
Base-emitter saturation voltage V
BE(sat)
I
C
= −7 A, I
B
= −7 mA −3V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 1 MHz 20 MHz
Turn-on time t
on I
C
= −7 A, I
B1
= −7 mA, I
B2
= 7 mA
1.0 µs
Storage time t
stg
V
CC
= −50 V 1.5 µs
Fall time t
f
1.2 µs
Rank Q S P
h
FE2
3 500 to 10 000 5 000 to 15 000 7 000 to 20 000
20.0±0.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
123
26.0
±
0.5
(10.0)
(2.5)
Solder Dip
(6.0)
(4.0)
(2.0)
(1.5)
(1.5)
20.0
±
0.5
5.0±0.3
φ 3.3±0.2
(1.5)
2.7±0.3
0.6±0.2
(3.0)
(3.0)
(2.0)
Unit: mm
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
1
Publication date: March 2003 SJD00076BED
2SB1470
Silicon PNP triple diffusion planar type darlington
For power amplification
Complementary to 2SD2222
■ Features
• Optimum for 120 W HiFi output
• High forward current transfer ratio h
FE
• Low collector-emitter saturation voltage V
CE(sat)
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−160 V
Collector-emitter voltage (Base open) V
CEO
−160 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−8A
Peak collector current I
CP
−15 A
Collector power dissipation P
C
150 W
T
a
= 25°C 3.5
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Internal Connection
B
C
E
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −30 mA, I
B
= 0 −160 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −160 V, I
E
= 0 −100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −160 V, I
B
= 0 −100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −100 µA
Forward current transfer ratio h
FE1
V
CE
= −5 V, I
C
= −1 A 1 000
h
FE2
*
V
CE
= −5 V, I
C
= −7 A 3 500 20 000
Collector-emitter saturation voltage V
CE(sat)
I
C
= −7 A, I
B
= −7 mA −3V
Base-emitter saturation voltage V
BE(sat)
I
C
= −7 A, I
B
= −7 mA −3V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 1 MHz 20 MHz
Turn-on time t
on I
C
= −7 A, I
B1
= −7 mA, I
B2
= 7 mA
1.0 µs
Storage time t
stg
V
CC
= −50 V 1.5 µs
Fall time t
f
1.2 µs
Rank Q S P
h
FE2
3 500 to 10 000 5 000 to 15 000 7 000 to 20 000
20.0±0.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
123
26.0
±
0.5
(10.0)
(2.5)
Solder Dip
(6.0)
(4.0)
(2.0)
(1.5)
(1.5)
20.0
±
0.5
5.0±0.3
φ 3.3±0.2
(1.5)
2.7±0.3
0.6±0.2
(3.0)
(3.0)
(2.0)
Unit: mm
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package