Power Transistors
1
Publication date: January 2003 SJD00301AED
2SB1623A
Silicon PNP epitaxial planar type
For power amplification
■ Features
• High forward current transfer ratio h
FE
• Satisfactory linearity of forward current transfer ratio h
FE
• Dielectric breakdown voltage of the package: > 5 kV
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−80 V
Collector-emitter voltage (Base open) V
CEO
−80 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−4A
Peak collector current I
CP
−8A
Collector power
T
C
= 25°CP
C
40 W
dissipation
2.0
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −30 mA, I
B
= 0 −80 V
Base-emitter voltage V
BE
V
CE
= −3 V, I
C
= −3 A −2.5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −80 V, I
E
= 0 −200 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −40 V, I
B
= 0 −500 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −2mA
Forward current transfer ratio h
FE1
V
CE
= −3 V, I
C
= − 0.5 A 1 000 
h
FE2

*
V
CE
= −3 V, I
C
= −3 A 1 000 10 000
Collector-emitter saturation voltage V
CE(sat)1
I
C
= −3 A, I
B
= −12 mA −2V
V
CE(sat)2
I
C
= −5 A, I
B
= −20 mA −4
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 1 MHz 20 MHz
Turn-on time t
on I
C
= −3 A, I
B1
= −12 mA, I
B2
= 12 mA
0.3 µs
Storage time t
stg
V
CC
= −50 V 2.0 µs
Fall time t
f
0.5 µs
Rank R Q P
h
FE2
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000