Power Transistors
1
Publication date: April 2003 SJD00085BED
2SB1593
Silicon PNP epitaxial planar type
For low-frequency output amplification
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2 2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
10.8 C 23
0.4±0.1
4.5±0.2
0.8 C 0.8 C
3.8
±
0.2
16.0
±
1.0
10.8
±
0.2
2.05
±
0.2
90˚
2.5
±
0.1
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−29 V
Collector-emitter voltage V
CER
−29 V
(Resistor between B and E)
Collector-emitter voltage (Base open) V
CEO
−20 V
Emitter-base voltage (Collector open) V
EBO
−11 V
Collector current I
C
−3A
Peak collector current I
CP
−10 A
Collector power dissipation P
C
1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 ∼ +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emiter open) V
CBO
I
C
= −10 µA, I
E
= 0 −29 V
Collector-emitter voltage V
CER
I
C
= −1 mA, R
BE
= 10 kΩ−29 V
(Resistor between B and E)
Collector-emitter voltage (Base open) V
CEO
I
C
= −1 mA, I
B
= 0 −20 V
Emiter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −11 V
Forward current transfer ratio h
FE
V
CE
= −2 V, I
C
= −2.6 A 100 450 
Collector-emitter saturation voltage V
CE(sat)
I
C
= −2.6 A, I
B
= −40 mA − 0.3 − 0.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 110 150 pF
(Common base, input open circuited)